The Measurement and Development of Parametric Values for Modeling of Mosfet dc Operations

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dc.contributor.advisorWright, Wayne M., 1934-
dc.contributor.authorDischer, Norman C.
dc.date.accessioned2011-08-30T19:07:52Z
dc.date.available2011-08-30T19:07:52Z
dc.date.issued1982
dc.descriptionvi, 33p.en_US
dc.description.abstractThe object of this study was to find a set of parameters that are characteristic of a particular type of MOSFET, which was constructed by Kodak for internal purposes. The set of parameters will be used as a data file to simulate that particular type of transistor in a circuit simulation computer program, SPICE2G.en_US
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/10920/23340
dc.language.isoen_USen_US
dc.relation.ispartofKalamazoo College Physics Senior Individualized Projects Collection
dc.relation.ispartofseriesSenior Individualized Projects. Physics.;
dc.rightsU.S. copyright laws protect this material. Commercial use or distribution of this material is not permitted without prior written permission of the copyright holder. All rights reserved.
dc.titleThe Measurement and Development of Parametric Values for Modeling of Mosfet dc Operationsen_US
dc.typeThesisen_US
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