An Analysis of Phosphorus in Chemical Vapor Deposited Films for Semiconductor Device Fabrication
Loading...
Authors
Murray, Kathleen A.
Issue Date
1986
Type
Thesis
Language
en_US
Keywords
Alternative Title
Abstract
A semiconductor is a crystalline material having a
conductivity between that of a conductor and an insulator.
The conductivity of semiconductors can be varied by changes
in temperature, optical excitation, and impurity content.
This variability of electrical properties makes the
semiconductor material of elementary crystalline silicon an
ideal material for electronic device fabrication. Silicon
has the ability of undergoing a large variety of processing
steps without the problems of decomposition. One such
process involved in fabrication is the chemical vapor
deposition of silicon dioxide films on the silicon. Chemical
vapor deposition (CVD) can be defined as a material
synthesis method in which the constituents of the vapor
phase react to form a solid film at the surface of a silicon
wafer. Dielectric layers such as the deposited silicon
dioxide, and phosphorus doped oxides, silicon dioxide rich
with phosphorus pentoxide, are used in semiconductor device
fabrication for the insulation between conducting layers,
for diffusion and ion implantation masks, and for
passification to protect devices from impurities, scratches,
and moisture.
If you are not a current K College student, faculty, or staff member, email dspace@kzoo.edu to request access to this SIP.
If you are not a current K College student, faculty, or staff member, email dspace@kzoo.edu to request access to this SIP.
Description
iv, 57 p.
Citation
Publisher
Kalamazoo College
License
U.S. copyright laws protect this material. Commercial use or distribution of this material is not permitted without prior written permission of the copyright holder. All rights reserved.